HTJ1K5P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HTJ1K5P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 66 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de HTJ1K5P06 MOSFET
HTJ1K5P06 Datasheet (PDF)
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Otros transistores... HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , RFP50N06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 .
History: NVGS3136P | PHP2N60E | PHP3055E | NCEP40T15G | STFI28N60M2 | PHP33N10
History: NVGS3136P | PHP2N60E | PHP3055E | NCEP40T15G | STFI28N60M2 | PHP33N10
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