FDS9933BZ MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDS9933BZ datasheet

..1. Size:292K fairchild semi
fds9933bz.pdf pdf_icon

March 2008 FDS9933BZ tm Dual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46m Features General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0A that has been especially tailored to minimize

7.1. Size:367K fairchild semi
fds9933.pdf pdf_icon

September 2006 FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

7.2. Size:63K fairchild semi
fds9933a.pdf pdf_icon

November 1998 FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(on) = 0.105 @ VGS = -2.5 V. process that has been especially tailored to minimize the on-state resistance and yet ma

7.3. Size:1522K cn vbsemi
fds9933a.pdf pdf_icon

FDS9933A www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie

Otros transistores... FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A , IRFP064N , FDS9934C , SDU05N04 , FDS9945 , FDS9953A , FDS9958 , FDS9958F085 , FDSS2407 , FDT3612 .