HTJ440P02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HTJ440P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 124 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de HTJ440P02 MOSFET
HTJ440P02 Datasheet (PDF)
htj440p02.pdf

HTJ440P02 P-120V P-Ch Power MOSFET-20 VVDSFeature37RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level55RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness65RDS(on),typ VGS=1.8V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainD
htj440p02e.pdf

HTJ440P02E P-120V P-Ch Power MOSFET-20 VVDSFeature37RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level55RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness65RDS(on),typ VGS=1.8V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23Drain
htj440p03.pdf

HTJ440P03 P-130V P-Ch Power MOSFET-30 VVDSFeature32RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level39RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness60RDS(on),typ VGS=2.5V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainD
Otros transistores... HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 , CS150N03A8 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 , HTJ850P03 .
History: STL80N3LLH6 | BUK962R8-30B
History: STL80N3LLH6 | BUK962R8-30B



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