FDS9958 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

July 2007FDS9958tmDual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the RoHS

November 2008FDS9958_F085Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the o

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2001 FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 2.9 A, 30 V R = 130 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 200 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g

February 2001 FDS9945 60V N-Channel PowerTrench MOSFET General Description Features 3.5 A, 60 V. R = 0.100 @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have been R = 0.200 @ V = 4.5V DS(ON) GSdesigned specifically to improve the overall efficiency of DC/DC converters using either synchronous or Optimized for use in switching DC/DC converters co

March 2006FDS9934CComplementary FeaturesThese dual N- and P-Channel enhancement mode Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 Vpower field effect transistors are produced usingRDS(ON) = 43 m @ VGS = 2.5 V.Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimizeon-state ressitance and yet maintain superior switchingperf

July 2003FDS9926ADual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 43 m @ VGS = 2.5 V.process. It has been optimized for power managementapplications with a wide range of gate drive voltage Optimized

March 2008FDS9933BZtmDual P-Channel 2.5V Specified PowerTrench MOSFET -20V, -4.9A, 46mFeatures General Description Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0Athat has been especially tailored to minimize

September 2006FDS9933 Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5 A, 20 V, RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 90 m @ VGS = 2.5 V process. It has been optimized for power management applications with a wide range of ga

November 1998FDS9933ADual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -3.8 A, -20 V. RDS(on) = 0.075 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.105 @ VGS = -2.5 V.process that has been especially tailored to minimize theon-state resistance and yet ma

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS9926Awww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

FDS9945-NLwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

FDS9933Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie