SFB030N100C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB030N100C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 223 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 1245 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO-263
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SFB030N100C3 Datasheet (PDF)
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SFP033N85C3,SFB030N85C3 N-MOSFET 85V, 2.8m, 190AFeatures Product Summary Uses advanced SGT MOSFET technology VDS 85V Extremely low on-resistance RDS(on) RDS(on)@VGS=10V m2.8 High Ruggedness 100% Avalance Tested ID 190AApplication MarkingPart ID Package Type Motor Drives UPS (Uninterruptible Power Supplies) SFP033N85C3 033N85C3TO-22
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SFP036N80C3,SFB034N80C3 N-MOSFET 80V, 3m, 120AFeatures Product Summary Low on resistanceV 80V DS Low gate chargeR 3m DS(on) typ. Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/D
Otros transistores... HTS500B03 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 , SFB025N100C3 , SFB027N100C3 , IRF1010E , SFB030N85C3 , SFB032N95C3 , SFB034N80C3 , SFB037N100C3 , SFB037N40C2 , SFB037N85C2 , SFB039N100C3 , SFB040N100C3 .
History: QM4302S | AP02N90H-HF
History: QM4302S | AP02N90H-HF



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