SFB040N100C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB040N100C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 227 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 56 nS
Cossⓘ - Capacitancia de salida: 2681 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Paquete / Cubierta: TO-263
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Otros transistores... SFB030N100C3 , SFB030N85C3 , SFB032N95C3 , SFB034N80C3 , SFB037N100C3 , SFB037N40C2 , SFB037N85C2 , SFB039N100C3 , IRF9540N , SFB042N100BC3 , SFB042N100C3 , SFB043N150C3 , SFB044N100C3 , SFB046N80C3 , SFB046N90C3 , SFB047N150C3 , SFB049N80BI3 .
History: PHD9NQ20T | BUK9Y30-75B | FHU2N60A | LNC06R230
History: PHD9NQ20T | BUK9Y30-75B | FHU2N60A | LNC06R230



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