SFB043N150C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB043N150C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 429 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 206 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 745 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de SFB043N150C3 MOSFET
SFB043N150C3 datasheet
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SFP046N150C3,SFB043N150C3,SFW043N150C3 N-MOSFET 150V, 3.9m Product Summary Features High Speed Power Smooth Switching VDS 150V Enhanced Body diode dv/dt capability RDS(on) typ. 3.9m Enhanced Avalanche Ruggedness I R 206A D (Sillicon Limited) Applications 100% DVDS Tested Synchronous Rectification in SMPS Hard Switching and High Speed Circuit 100% Avala
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sfp045n100c3 sfb042n100c3.pdf
SFP045N100C3,SFB042N100C3 N-MOSFET 100V, 3.9m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 3.9m Qualified according to JEDEC criteria ID R 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested Battery management UPS (Uninter
Otros transistores... SFB034N80C3 , SFB037N100C3 , SFB037N40C2 , SFB037N85C2 , SFB039N100C3 , SFB040N100C3 , SFB042N100BC3 , SFB042N100C3 , AON7410 , SFB044N100C3 , SFB046N80C3 , SFB046N90C3 , SFB047N150C3 , SFB049N80BI3 , SFB049N80C3 , SFB050N135C3 , SFB052N100AC2 .
History: IRLL024N | PJP5NA50 | TK12A50D | BRCS150N12SZC | SDF9N100JEB-D
History: IRLL024N | PJP5NA50 | TK12A50D | BRCS150N12SZC | SDF9N100JEB-D
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