SFB043N150C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB043N150C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 429 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 206 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 745 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de SFB043N150C3 MOSFET
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Otros transistores... SFB034N80C3 , SFB037N100C3 , SFB037N40C2 , SFB037N85C2 , SFB039N100C3 , SFB040N100C3 , SFB042N100BC3 , SFB042N100C3 , RFP50N06 , SFB044N100C3 , SFB046N80C3 , SFB046N90C3 , SFB047N150C3 , SFB049N80BI3 , SFB049N80C3 , SFB050N135C3 , SFB052N100AC2 .
History: IPB114N03LG | QM4302D | SM4066CSK
History: IPB114N03LG | QM4302D | SM4066CSK



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