SFB050N135C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB050N135C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 135 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 175 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 533 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
Paquete / Cubierta: TO-263
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SFB050N135C3 Datasheet (PDF)
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Otros transistores... SFB042N100C3 , SFB043N150C3 , SFB044N100C3 , SFB046N80C3 , SFB046N90C3 , SFB047N150C3 , SFB049N80BI3 , SFB049N80C3 , IRLB4132 , SFB052N100AC2 , SFB052N100BC2 , SFB052N100C2 , SFB052N100C3 , SFB052N80C2 , SFB052N85C3 , SFB052N90C3 , SFB053N100C3 .
History: S30N08M | SI1070X | AP85T10GP-HF | AON4407 | G30N20T | APT10030L2VFR | IXFH40N85X
History: S30N08M | SI1070X | AP85T10GP-HF | AON4407 | G30N20T | APT10030L2VFR | IXFH40N85X



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