SFB058N80C3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFB058N80C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 145 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 526 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm

Encapsulados: TO-263

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SFB058N80C3 datasheet

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 sfp060n80c3 sfb058n80c3.pdf pdf_icon

SFB058N80C3

SFP060N80C3,SFB058N80C3 N-MOSFET 80V, 5.0m , 120A Features Product Summary Low on resistance V 80V DS Low gate charge R 5.0m DS(on) typ. Fast switching I 120A D High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and

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 sfp055n100c2 sfb052n100c2.pdf pdf_icon

SFB058N80C3

SFP055N100C2,SFB052N100C2 N-MOSFET 100V, 4.5m , 180A Features Product Summary Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 4.5m Qualified according to JEDEC criteria ID 180A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)

 9.2. Size:2847K  cn scilicon
 sfp055n85c3 sfb052n85c3.pdf pdf_icon

SFB058N80C3

SFP055N85C3, SFB052N85C3 N-MOSFET 95V, 4.6m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 95V Excellent QgxRDS(on) product(FOM) RDS(on) 4.6m Qualified according to JEDEC criteria ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP05

 9.3. Size:6516K  cn scilicon
 sfp055n100bc2 sfb052n100bc2.pdf pdf_icon

SFB058N80C3

SFP055N100BC2,SFB052N100BC2 N-MOSFET 100V, 4.0m , 200A Features Product Summary VDS 100V Enhancement mode RDS(on) typ. 4.0m Very low on-resistance RDS(on) @ VGS=10V ID 200A Fast Switching and High efficiency 100% Avalanche Tested 100% DVDS Tested Pb-free lead plating; RoHS compliant 100% Avalanche Tested SFP055N100BC2 SFB052N100BC2 Package Marking and

MOSTRAR MÁS

Otros transistores... SFB052N100AC2, SFB052N100BC2, SFB052N100C2, SFB052N100C3, SFB052N80C2, SFB052N85C3, SFB052N90C3, SFB053N100C3, IRFP250, SFB059N95C3, SFB063N70C3, SFB063N80AC3, SFB063N80C3, SFB067N80C2, SFB068N150C3, SFB068N90C3, SFB070N150C3