SFB063N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB063N80C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 157 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 105 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32.7 nS
Cossⓘ - Capacitancia de salida: 1596 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de SFB063N80C3 MOSFET
SFB063N80C3 Datasheet (PDF)
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SFP069N150C3,SFB068N150C3 N-MOSFET 150V, 6.0m, 140AFeatures Product Summary High Speed Power Smooth SwitchingV 150V DS Enhanced Body diode dv/dt capabilityR 6.0m DS(on) Enhanced Avalanche RuggednessI 140A D100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter
Otros transistores... SFB052N80C2 , SFB052N85C3 , SFB052N90C3 , SFB053N100C3 , SFB058N80C3 , SFB059N95C3 , SFB063N70C3 , SFB063N80AC3 , 13N50 , SFB067N80C2 , SFB068N150C3 , SFB068N90C3 , SFB070N150C3 , SFB072N150C2 , SFB072N150I2 , SFB077N100AC2 , SFB077N150C2 .
History: IXTY10P15T | HCS80R1K4S | DAMIA1100N100 | JCS730B | STY130NF20D | IPAN60R360P7S | AOW15S60
History: IXTY10P15T | HCS80R1K4S | DAMIA1100N100 | JCS730B | STY130NF20D | IPAN60R360P7S | AOW15S60



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