SFB067N80C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB067N80C2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 217 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 118 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 328 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO-263
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SFB067N80C2 Datasheet (PDF)
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Otros transistores... SFB052N85C3 , SFB052N90C3 , SFB053N100C3 , SFB058N80C3 , SFB059N95C3 , SFB063N70C3 , SFB063N80AC3 , SFB063N80C3 , SKD502T , SFB068N150C3 , SFB068N90C3 , SFB070N150C3 , SFB072N150C2 , SFB072N150I2 , SFB077N100AC2 , SFB077N150C2 , SFB082N165C3 .
History: C3M0065100K | VBE165R07
History: C3M0065100K | VBE165R07



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