SFB070N150C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFB070N150C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 300 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 140 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 64 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 386 pF
Resistencia entre drenaje y fuente RDS(on): 0.0073 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET SFB070N150C3
SFB070N150C3 Datasheet (PDF)
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sfp080n150c2 sfb077n150c2.pdf
SFP080N150C2, SFB077N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product SummaryVDS150V High Speed Power Switching Enhanced Body diode dv/dt capabilityRDS(on)6.0m Enhanced Avalanche RuggednessID 140AApplications100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100
sfp075n150i2 sfb072n150i2.pdf
SFP075N150I2,SFB072N150I2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested
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