SFP026N30BC3 Todos los transistores

 

SFP026N30BC3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFP026N30BC3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 1065 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de SFP026N30BC3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SFP026N30BC3 Datasheet (PDF)

 ..1. Size:967K  cn scilicon
 sfp026n30bc3.pdf pdf_icon

SFP026N30BC3

SFP026N30BC3 N-MOSFET 30V, 2.0m, 150AFeatures Product Summary Excellent gate charge x R product(FOM)DS(on)V 30V DS Fast switchingR 2.0m DS(on) High avalanche currentI 150A D Extremely low on-resistance RDS(on)100% DVDS Tested Application Brushed and BLDC Motor drive systems100% Avalanche Tested Battery Management DC/DC and AC

 7.1. Size:1951K  cn scilicon
 sfp026n100c3 sfb024n100c3.pdf pdf_icon

SFP026N30BC3

SFP026N100C3,SFB024N100C3 N-MOSFET 100V, 2.1m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.1m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manage

 9.1. Size:1945K  cn scilicon
 sfp024n80c3 sfb021n80c3.pdf pdf_icon

SFP026N30BC3

SFP024N80C3,SFB021N80C3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80C3 SFB021N80C3Package Marking and

 9.2. Size:1314K  cn scilicon
 sfp024n80i3 sfb021n80i3.pdf pdf_icon

SFP026N30BC3

SFP024N80I3,SFB021N80I3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80I3 SFB021N80I3Package Marking and

MOSTRAR MÁS

Otros transistores... SFD347N100C2 , SFG014N100BC3 , SFG019N100C3 , SFG025N150C3 , SFI085N68C2 , SFP024N80C3 , SFP024N80I3 , SFP026N100C3 , IRF840 , SFP028N100C3 , SFP030N100C3 , SFP032N100C3 , SFP033N85C3 , SFP035N95C3 , SFP036N30BC3 , SFP036N80C3 , SFP040N100C3 .

History: SSP7N60B | NTTFS5D1N06HL | WSD30L90DN56 | KIA4N60H-251 | NDT90N03 | NCEP1580 | WNMD2162

 

 
Back to Top

 


 
.