SFP030N100C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFP030N100C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 341 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 190 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 114 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET SFP030N100C3

SFP030N100C3 Datasheet (PDF)

..1. Size:7215K cn scilicon
sfp030n100c3 sfb027n100c3.pdf

SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m, 190AProduct SummaryFeature High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on)2.5m Enhanced Avalanche RuggednessID 190A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100%

9.1. Size:2672K cn scilicon
sfp033n85c3 sfb030n85c3.pdf

SFP033N85C3,SFB030N85C3 N-MOSFET 85V, 2.8m, 190AFeatures Product Summary Uses advanced SGT MOSFET technology VDS 85V Extremely low on-resistance RDS(on) RDS(on)@VGS=10V m2.8 High Ruggedness 100% Avalance Tested ID 190AApplication MarkingPart ID Package Type Motor Drives UPS (Uninterruptible Power Supplies) SFP033N85C3 033N85C3TO-22

9.2. Size:1354K cn scilicon
sfp035n95c3 sfb032n95c3.pdf

SFP035N95C3, SFB032N95C3N-MOSFET 95V, 3.0m, 190AFeatures Product Summary Extremely low on-resistance RDS(on)VDS95V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 3.0m Qualified according to JEDEC criteria ID190A100% DVDS TestedApplications100% Avalanche TestedMotor DrivesSR (Synchronous rectification)DC/DC converterGeneral purpos

9.3. Size:717K cn scilicon
sfp036n80c3 sfb034n80c3.pdf

SFP036N80C3,SFB034N80C3 N-MOSFET 80V, 3m, 120AFeatures Product Summary Low on resistanceV 80V DS Low gate chargeR 3m DS(on) typ. Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/D

9.4. Size:720K cn scilicon
sfp032n100c3 sfb030n100c3.pdf

SFP032N100C3,SFB030N100C3 N-MOSFET 100V, 2.6m, 260AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.6m DS(on) typ. Fast switchingI 260A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manag

9.5. Size:1781K cn scilicon
sfp036n30bc3.pdf

SFP036N30BC3 N-MOSFET 30V, 2.7m, 150AFeatures Product Summary Excellent gate charge x R product(FOM)DS(on)V 30V DS Fast switchingR 2.7m DS(on) High avalanche currentI 150A D Extremely low on-resistance RDS(on)100% DVDS Tested Application Brushed and BLDC Motor drive systems100% Avalanche Tested Battery Management DC/DC and AC

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History: MIC94053BC6TR

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