SFP036N80C3 Todos los transistores

 

SFP036N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFP036N80C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 160 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 56 nS
   Conductancia de drenaje-sustrato (Cd): 936 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
   Paquete / Cubierta: TO-220

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SFP036N80C3 Datasheet (PDF)

 ..1. Size:717K  cn scilicon
sfp036n80c3 sfb034n80c3.pdf

SFP036N80C3
SFP036N80C3

SFP036N80C3,SFB034N80C3 N-MOSFET 80V, 3m, 120AFeatures Product Summary Low on resistanceV 80V DS Low gate chargeR 3m DS(on) typ. Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/D

 7.1. Size:1781K  cn scilicon
sfp036n30bc3.pdf

SFP036N80C3
SFP036N80C3

SFP036N30BC3 N-MOSFET 30V, 2.7m, 150AFeatures Product Summary Excellent gate charge x R product(FOM)DS(on)V 30V DS Fast switchingR 2.7m DS(on) High avalanche currentI 150A D Extremely low on-resistance RDS(on)100% DVDS Tested Application Brushed and BLDC Motor drive systems100% Avalanche Tested Battery Management DC/DC and AC

 9.1. Size:2672K  cn scilicon
sfp033n85c3 sfb030n85c3.pdf

SFP036N80C3
SFP036N80C3

SFP033N85C3,SFB030N85C3 N-MOSFET 85V, 2.8m, 190AFeatures Product Summary Uses advanced SGT MOSFET technology VDS 85V Extremely low on-resistance RDS(on) RDS(on)@VGS=10V m2.8 High Ruggedness 100% Avalance Tested ID 190AApplication MarkingPart ID Package Type Motor Drives UPS (Uninterruptible Power Supplies) SFP033N85C3 033N85C3TO-22

 9.2. Size:1354K  cn scilicon
sfp035n95c3 sfb032n95c3.pdf

SFP036N80C3
SFP036N80C3

SFP035N95C3, SFB032N95C3N-MOSFET 95V, 3.0m, 190AFeatures Product Summary Extremely low on-resistance RDS(on)VDS95V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 3.0m Qualified according to JEDEC criteria ID190A100% DVDS TestedApplications100% Avalanche TestedMotor DrivesSR (Synchronous rectification)DC/DC converterGeneral purpos

 9.3. Size:720K  cn scilicon
sfp032n100c3 sfb030n100c3.pdf

SFP036N80C3
SFP036N80C3

SFP032N100C3,SFB030N100C3 N-MOSFET 100V, 2.6m, 260AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.6m DS(on) typ. Fast switchingI 260A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manag

 9.4. Size:7215K  cn scilicon
sfp030n100c3 sfb027n100c3.pdf

SFP036N80C3
SFP036N80C3

SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m, 190AProduct SummaryFeature High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on)2.5m Enhanced Avalanche RuggednessID 190A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100%

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