SFP041N100C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFP041N100C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 856 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de SFP041N100C3 MOSFET
SFP041N100C3 Datasheet (PDF)
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Otros transistores... SFP032N100C3 , SFP033N85C3 , SFP035N95C3 , SFP036N30BC3 , SFP036N80C3 , SFP040N100C3 , SFP040N40C2 , SFP040N85C2 , IRF630 , SFP043N100C3 , SFP045N100BC3 , SFP045N100C3 , SFP046N100C3 , SFP046N150C3 , SFP048N150C3 , SFP049N80C3 , SFP049N90C3 .
History: TMP16N60 | IRFB17N20DPBF | SFG170N10KF | TK8A50D | FDS8960C | TK80S06K3L | JFPC5N80C
History: TMP16N60 | IRFB17N20DPBF | SFG170N10KF | TK8A50D | FDS8960C | TK80S06K3L | JFPC5N80C



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