SFP048N150C3 Todos los transistores

 

SFP048N150C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFP048N150C3
   Código: 048N150C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 125 nC
   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 823 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de SFP048N150C3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SFP048N150C3 Datasheet (PDF)

 ..1. Size:697K  cn scilicon
 sfp048n150c3 sfb047n150c3.pdf pdf_icon

SFP048N150C3

SFP048N150C3,SFB047N150C3 N-MOSFET 150V, 4m, 200AFeatures Product Summary Low on resistanceV 150V DS Low gate chargeR 4m DS(on) typ. Fast switchingI 200A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Managemen

 9.1. Size:2141K  cn scilicon
 sfp045n100c3 sfb042n100c3.pdf pdf_icon

SFP048N150C3

SFP045N100C3,SFB042N100C3 N-MOSFET 100V, 3.9m, 120AFeatures Product Summary Extremely low on-resistance RDS(on) VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 3.9m Qualified according to JEDEC criteria IDR 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested Battery management UPS (Uninter

 9.2. Size:2226K  cn scilicon
 sfp043n100c3 sfb040n100c3.pdf pdf_icon

SFP048N150C3

SFP043N100C3,SFB040N100C3 N-MOSFET 100V, 3.4m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS 100V Excellent QgxRDS(on) product(FOM)RDS(on) 3.4m Qualified according to JEDEC criteriaID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP

 9.3. Size:3764K  cn scilicon
 sfp049n80c3 sfb046n80c3.pdf pdf_icon

SFP048N150C3

SFP049N80C3, SFB046N80C3 N-MOSFET 80V, 4.2m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on)VDS80V Excellent gate charge x RDS(on) product(FOM)RDS(on)4.2mID 120A100% DVDS TestedApplication Motor control and drives100% Avalanche Tested Battery management100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Av

MOSTRAR MÁS

Otros transistores... SFP040N40C2 , SFP040N85C2 , SFP041N100C3 , SFP043N100C3 , SFP045N100BC3 , SFP045N100C3 , SFP046N100C3 , SFP046N150C3 , IRFB4110 , SFP049N80C3 , SFP049N90C3 , SFP052N80BI3 , SFP052N80C3 , SFP053N135C3 , SFP053N60C2 , SFP055N100AC2 , SFP055N100BC2 .

History: STB60NF06-1 | SSF90R420S2

 

 
Back to Top

 


 
.