SFP049N90C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFP049N90C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 189 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 1207 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET SFP049N90C3
SFP049N90C3 Datasheet (PDF)
sfp049n90c3 sfb046n90c3.pdf
SFP049N90C3,SFB046N90C3 N-MOSFET 90V, 3.9m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS 90V Excellent QgxRDS(on) product(FOM)RDS(on) 3.9m Qualified according to JEDEC criteriaID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP049N90
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sfp048n150c3 sfb047n150c3.pdf
SFP048N150C3,SFB047N150C3 N-MOSFET 150V, 4m, 200AFeatures Product Summary Low on resistanceV 150V DS Low gate chargeR 4m DS(on) typ. Fast switchingI 200A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Managemen
sfp045n100c3 sfb042n100c3.pdf
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sfp046n100c3 sfb044n100c3.pdf
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sfp040n40c2 sfb037n40c2.pdf
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sfp040n100c3 sfb037n100c3.pdf
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sfp045n100bc3 sfb042n100bc3.pdf
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