FDT86106LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDT86106LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.3 nS
   Cossⓘ - Capacitancia de salida: 46 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.108 Ohm
   Paquete / Cubierta: SOT223

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FDT86106LZ Datasheet (PDF)

..1. Size:364K fairchild semi
fdt86106lz.pdf

December 2010FDT86106LZN-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mFeatures General DescriptionThis N-Channel logic Level MOSFETs are produced using Max rDS(on) = 108 m at VGS = 10 V, ID = 3.2 AFairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state resistanc

7.1. Size:252K fairchild semi
fdt86102lz.pdf

November 2010FDT86102LZN-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mFeatures General Description Max rDS(on) = 28 m at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and switchin

7.2. Size:359K onsemi
fdt86102lz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.3. Size:201K kexin
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SMD Type MOSFETN-Channel MOSFETFDT86102LZUnit:mmSOT-223 Features6.500.23.000.1 VDS (V) = 100V ID =6.6 A(VGS = 20V)4 RDS(ON) 28m (VGS =10V) RDS(ON) 38m (VGS =4.5V)1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate 2.Drain3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 ParameterSymbol Rating UnitDrain-Source Voltage

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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