FDT86106LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

December 2010FDT86106LZN-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mFeatures General DescriptionThis N-Channel logic Level MOSFETs are produced using Max rDS(on) = 108 m at VGS = 10 V, ID = 3.2 AFairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state resistanc

November 2010FDT86102LZN-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mFeatures General Description Max rDS(on) = 28 m at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and switchin

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel MOSFETFDT86102LZUnit:mmSOT-223 Features6.500.23.000.1 VDS (V) = 100V ID =6.6 A(VGS = 20V)4 RDS(ON) 28m (VGS =10V) RDS(ON) 38m (VGS =4.5V)1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate 2.Drain3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 ParameterSymbol Rating UnitDrain-Source Voltage