FDT86113LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDT86113LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 4.1 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET FDT86113LZ

FDT86113LZ Datasheet (PDF)

..1. Size:173K fairchild semi
fdt86113lz.pdf

March 2011FDT86113LZN-Channel PowerTrench MOSFET 100 V, 3.3 A, 100 m Features General DescriptionThis N-Channel logic Level MOSFETs are produced using Max rDS(on) = 100 m at VGS = 10 V, ID = 3.3 AFairchild Semiconductors advanced Power Trench process Max rDS(on) = 145 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state resistance H

..2. Size:316K onsemi
fdt86113lz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:859K cn vbsemi
fdt86113lz.pdf

FDT86113LZwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

8.1. Size:364K fairchild semi
fdt86106lz.pdf

December 2010FDT86106LZN-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mFeatures General DescriptionThis N-Channel logic Level MOSFETs are produced using Max rDS(on) = 108 m at VGS = 10 V, ID = 3.2 AFairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state resistanc

8.2. Size:252K fairchild semi
fdt86102lz.pdf

November 2010FDT86102LZN-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mFeatures General Description Max rDS(on) = 28 m at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and switchin

8.3. Size:359K onsemi
fdt86102lz.pdf

8.4. Size:201K kexin
fdt86102lz.pdf

SMD Type MOSFETN-Channel MOSFETFDT86102LZUnit:mmSOT-223 Features6.500.23.000.1 VDS (V) = 100V ID =6.6 A(VGS = 20V)4 RDS(ON) 28m (VGS =10V) RDS(ON) 38m (VGS =4.5V)1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate 2.Drain3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 ParameterSymbol Rating UnitDrain-Source Voltage

Otros transistores... FDT3N40 , SDU04N60 , FDT434P , FDT458P , FDT86102LZ , SDU03N04 , FDT86106LZ , SDU02N60 , IRF3710 , SDU02N25 , FDT86244 , FDT86246 , FDU3N40 , SDT03N04 , FDV305N , FDY1002PZ , FDY100PZ .

Liste

Recientemente añadidas las descripciónes de los transistores: