SFP120N120B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFP120N120B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm

Encapsulados: TO-220

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SFP120N120B datasheet

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SFP120N120B

SFP120N120B,SFB120N120B N-MOSFET 120V, 7.5m , 120A Product Summary F eatures VDS 120V Reliable and Rugged RDS(on) typ. 7.5m Lead Free and Green Devices Available ID 120A (RoHS Compliant) 100% DVDS Tested pplications A 100% Avalanche Tested Switching application Power Management for Inverter Systems. SFP120N120B SFB120N120B N-Channel MOSFET Package Mar

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 sfp120n80a sfb120n80a sfp066n80ac3 sfb063n80ac3.pdf pdf_icon

SFP120N120B

SFP120N80A,SFB120N80A SFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m , 120A Features Product Summary Enhancement Mode VDS 80V Very Low On-Resistance RDS(on) 5.5m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100

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 sfp12n65.pdf pdf_icon

SFP120N120B

SFP12N65 SFP12N65 SFP12N65 SFP12N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.78 )@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usin

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