FDT86246 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDT86246
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.236 Ohm
   Paquete / Cubierta: SOT223

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FDT86246 Datasheet (PDF)

..1. Size:226K fairchild semi
fdt86246.pdf

December 2010FDT86246N-Channel Power Trench MOSFET 150 V, 2 A, 236 mFeatures General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 Abeen optimized for rDS(on), switching performance and High performance trenc

7.1. Size:233K fairchild semi
fdt86244.pdf

May 2011FDT86244N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 mFeatures General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 Abeen optimized for rDS(on), switching performance and High performance trench

7.2. Size:352K onsemi
fdt86244.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.3. Size:2063K kexin
fdt86244.pdf

SMD Type MOSFETN-Channel Enhancement MOSFET FDT86244Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3D0.2502.30 (typ)Gauge Plane1.GateG D S 2.Drain0.700.13.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Parameter

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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