FDY301NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDY301NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 0.8 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT523F

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FDY301NZ Datasheet (PDF)

..1. Size:222K fairchild semi
fdy301nz.pdf

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection

..2. Size:303K onsemi
fdy301nz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:373K fairchild semi
fdy3000nz.pdf

January 2007January 2007tmFDY3000NZDual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v.Applications ESD protect

9.2. Size:266K fairchild semi
fdy300nz.pdf

January 2007January 2007tmFDY300NZSingle N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 Vusing Fairchild Semiconductors advanced PowerRDS(ON) = 850 m @ VGS = 2.5 VTrench process to optimize the RDS(ON) @ VGS = 2.5v.Applications E

9.3. Size:213K fairchild semi
fdy302nz.pdf

July 2006 FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 300 m @ VGS = 4.5 V using Fairchild Semiconductors advanced PowerRDS(ON) = 500 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @VGS =2.5V. Applications ESD protection diode (n

9.4. Size:453K onsemi
fdy3000nz.pdf