FDZ191P Todos los transistores

 ..1. Size:248K  fairchild semi
 fdz191p.pdf

June 2009 FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General Description Designed on Fairchild's advanced 1.5V PowerTrench process Max rDS(on) = 85m at VGS = -4.5V, ID = -1A with state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1A FDZ191P minimizes both PCB space and rDS(on). This advanced WL

 9.1. Size:292K  fairchild semi
 fdz1905pz.pdf

July 2008 FDZ1905PZ tm Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET 20V, 3A, 123m Features General Description This device is designed specifically as a single package solution Max rS1S2(on) = 126m at VGS = 4.5V, IS1S2 = 1A for the battery charge switch in cellular handset and other Max rS1S2(on) = 141m at VGS = 2.5V, IS1S2 = 1A ultra-portab

 9.2. Size:303K  fairchild semi
 fdz192nz.pdf

January 2010 FDZ192NZ N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 5.3 A, 39 m Features General Description Max rDS(on) = 39 m at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 43 m at VGS = 2.5 V, ID = 2.0 A FDZ192NZ minimizes both PCB sp

 9.3. Size:239K  fairchild semi
 fdz193p.pdf

June 2009 FDZ193P tm P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m Features General Description Designed on Fairchild's advanced 1.7V PowerTrench process Max rDS(on) = 90m at VGS = -4.5V, ID = -1A with state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 130m at VGS = -2.5V, ID = -1A FDZ193P minimizes both PCB space and rDS(on). This adva

 9.4. Size:289K  fairchild semi
 fdz197pz.pdf

June 2009 FDZ197PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 m Features General Description Max rDS(on) = 64 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 71 m at VGS = -2.5 V, ID = -2.0 A FDZ197PZ minimizes both PCB

 9.5. Size:318K  onsemi
 fdz1905pz.pdf

MOSFET P-Channel, POWERTRENCH), Common Drain 1.5 V, WLCSP -20 V, -3 A, 126 mW FDZ1905PZ www.onsemi.com General Description This device is designed specifically as a single package solution for S1 the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on ON Semi