MP15N60EIB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP15N60EIB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 245 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 53.73 nC
Tiempo de subida (tr): 64 nS
Conductancia de drenaje-sustrato (Cd): 195 pF
Resistencia entre drenaje y fuente RDS(on): 0.85 Ohm
Paquete / Cubierta: TO262
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MP15N60EIB Datasheet (PDF)
mp15n60eif mp15n60eib mp15n60eis mp15n60eic.pdf
N RN-CHANNEL MOSFET MP15N60EI Package MAIN CHARACTERISTICS ID 15A VDSS 600V Rdson-max 0.48 Vgs=10V Qg-Typ 53.73nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
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