FDZ193P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDZ193P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.9 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
Paquete / Cubierta: WLCSP
Búsqueda de reemplazo de MOSFET FDZ193P
FDZ193P Datasheet (PDF)
fdz193p.pdf
June 2009FDZ193PtmP-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mFeatures General DescriptionDesigned on Fairchild's advanced 1.7V PowerTrench process Max rDS(on) = 90m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 130m at VGS = -2.5V, ID = -1AFDZ193P minimizes both PCB space and rDS(on). This adva
fdz191p.pdf
June 2009FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General DescriptionDesigned on Fairchild's advanced 1.5V PowerTrench process Max rDS(on) = 85m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1AFDZ191P minimizes both PCB space and rDS(on). This advanced WL
fdz1905pz.pdf
July 2008FDZ1905PZtmCommon Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET 20V, 3A, 123mFeatures General DescriptionThis device is designed specifically as a single package solution Max rS1S2(on) = 126m at VGS = 4.5V, IS1S2 = 1Afor the battery charge switch in cellular handset and other Max rS1S2(on) = 141m at VGS = 2.5V, IS1S2 = 1Aultra-portab
fdz192nz.pdf
January 2010FDZ192NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mFeatures General Description Max rDS(on) = 39 m at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 43 m at VGS = 2.5 V, ID = 2.0 AFDZ192NZ minimizes both PCB sp
fdz197pz.pdf
June 2009FDZ197PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mFeatures General Description Max rDS(on) = 64 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 71 m at VGS = -2.5 V, ID = -2.0 AFDZ197PZ minimizes both PCB
fdz1905pz.pdf
MOSFET P-Channel,POWERTRENCH), CommonDrain: 1.5 V, WLCSP-20 V, -3 A, 126 mWFDZ1905PZwww.onsemi.comGeneral DescriptionThis device is designed specifically as a single package solution forS1the battery charge switch in cellular handset and other ultra-portableapplications. It features two common drain P-channel MOSFETs,which enables bidirectional current flow, on ON Semi
Otros transistores... FDY300NZ , FDY301NZ , FDY302NZ , FDY4000CZ , SDT02N02 , FDZ1905PZ , FDZ191P , FDZ192NZ , 20N50 , FDZ197PZ , FDZ371PZ , FDZ372NZ , FDZ375P , FDZ391P , FQA10N80CF109 , SDF08N50 , FQA11N90F109 .
