FDZ372NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDZ372NZ Datasheet (PDF)

..1. Size:291K fairchild semi
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March 2010FDZ372NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 4.7 A, 50 mFeatures General DescriptionDesigned on Fairchild's advanced 1.5 V PowerTrench process Max rDS(on) = 50 m at VGS = 4.5 V, ID = 2 Awith state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 60 m at VGS = 2.5 V, ID = 2 Athe FDZ372NZ minimizes both PCB sp

9.1. Size:291K fairchild semi
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April 2010FDZ375PP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mFeatures General Description Max rDS(on) = 78 m at VGS = -4.5 V, ID = -2.0 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 92 m at VGS = -2.5 V, ID = -1.5 Athe FDZ375P minimizes bot

9.2. Size:284K fairchild semi
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July 2014FDZ371PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mFeatures General Description Max rDS(on) = 75 m at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 90 m at VGS = -2.5 V, ID = -1.5 Athe FDZ371PZ minimizes bot

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