NCE0102M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0102M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: SOT89

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NCE0102M datasheet

 ..1. Size:287K  ncepower
 nce0102m.pdf pdf_icon

NCE0102M

Pb Free Product http //www.ncepower.com NCE0102M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 7.1. Size:621K  ncepower
 nce0102e.pdf pdf_icon

NCE0102M

NCE0102E http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102E uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 2A DS D R

 7.2. Size:303K  ncepower
 nce0102z.pdf pdf_icon

NCE0102M

Pb Free Product http //www.ncepower.com NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 7.3. Size:312K  ncepower
 nce0102a.pdf pdf_icon

NCE0102M

http //www.ncepower.com NCE0102A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0102A uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)

MOSTRAR MÁS

Otros transistores... MT6JN008A, MT6JN009A, 2SK2049, A2N7002K, BSS123K, NCE0102A, NCE0102B, NCE0102E, IRFP064N, NCE0102Z, NCE0103, NCE0104AN, NCE0104S, NCE0105M, NCE0106AR, NCE0107AK, NCE0115AK