NCE0140AK2 Todos los transistores

 

NCE0140AK2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE0140AK2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 176 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO252
 

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NCE0140AK2 Datasheet (PDF)

 ..1. Size:628K  ncepower
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NCE0140AK2

NCE0140AK2http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140AK2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40A Schematic diagramDS DR

 7.1. Size:318K  ncepower
nce0140ia.pdf pdf_icon

NCE0140AK2

Pb Free ProductNCE0140IAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 7.2. Size:410K  ncepower
nce0140k2.pdf pdf_icon

NCE0140AK2

Pb Free Producthttp://www.ncepower.com NCE0140K2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 7.3. Size:752K  ncepower
nce0140i2.pdf pdf_icon

NCE0140AK2

http://www.ncepower.comNCE0140I2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140I2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40ADS DR

Otros transistores... NCE0104S , NCE0105M , NCE0106AR , NCE0107AK , NCE0115AK , NCE0117AK , NCE011N30GU , NCE0130GA , IRFZ44 , NCE0140I2 , NCE0140IA , NCE0157A , NCE0157A2D , NCE0157AK , NCE0157G , NCE0159 , NCE0160AG .

History: 24NM60L-TF2-T | SIHFD110 | 2N60L-TMS2-T | FHP4N65D | WMJ36N60C4 | AOB462L | HAT3008RJ

 

 
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