NCE01P05S Todos los transistores

 ..1. Size:384K  ncepower
 nce01p05s.pdf

http //www.ncepower.com NCE01P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-5A Schematic diagram RDS(ON)

 7.1. Size:350K  ncepower
 nce01p03s.pdf

Pb Free Product http //www.ncepower.com NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-3A Schematic diagram RDS(ON)

 8.1. Size:670K  ncepower
 nce01p30k.pdf

http //www.ncepower.com NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-30A Schematic diagram DS D R

 8.2. Size:343K  ncepower
 nce01p18l.pdf

http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 8.3. Size:562K  ncepower
 nce01p18d.pdf

http //www.ncepower.com NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 8.4. Size:713K  ncepower
 nce01p18.pdf

http //www.ncepower.com NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-18A Schematic diagram DS D R

 8.5. Size:739K  ncepower
 nce01p13i.pdf

http //www.ncepower.com NCE01P13I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13I uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-13A Schematic diagram DS D R

 8.6. Size:316K  ncepower
 nce01p30i.pdf

http //www.ncepower.com NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 8.7. Size:430K  ncepower
 nce01p18k.pdf

Pb Free Product http //www.ncepower.com NCE01P18K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

 8.8. Size:341K  ncepower
 nce01p30.pdf

 8.9. Size:297K  ncepower
 nce01p30l.pdf

http //www.ncepower.com NCE01P30L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 8.10. Size:790K  ncepower
 nce01p35k.pdf

http //www.ncepower.com NCE01P35K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P35K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-100V,I =-35A Schematic diagram DS D R

 8.11. Size:307K  ncepower
 nce01p13.pdf

NCE01P13 http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 8.12. Size:325K  ncepower
 nce01p30d.pdf

http //www.ncepower.com NCE01P30D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)

 8.13. Size:400K  ncepower
 nce01p13k.pdf

Pb Free Product http //www.ncepower.com NCE01P13K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)