NCE01P30L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE01P30L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 184.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de NCE01P30L MOSFET
- Selecciónⓘ de transistores por parámetros
NCE01P30L datasheet
nce01p30l.pdf
http //www.ncepower.com NCE01P30L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
nce01p30k.pdf
http //www.ncepower.com NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-30A Schematic diagram DS D R
nce01p30i.pdf
http //www.ncepower.com NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
Otros transistores... NCE01P05S, NCE01P13, NCE01P13I, NCE01P18, NCE01P18L, NCE01P30D, NCE01P30I, NCE01P30K, AON7408, NCE01P35K, NCE0203S, NCE0205IA, NCE0208IA, NCE0224A, NCE0224AF, NCE0224AK, NCE0224DA
History: NCEAP25N10AK
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