NCE0208IA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE0208IA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO-251

 Búsqueda de reemplazo de NCE0208IA MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE0208IA datasheet

 ..1. Size:322K  ncepower
 nce0208ia.pdf pdf_icon

NCE0208IA

Pb Free Product http //www.ncepower.com NCE0208IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 7.1. Size:433K  ncepower
 nce0208ka.pdf pdf_icon

NCE0208IA

Pb Free Product http //www.ncepower.com NCE0208KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.1. Size:305K  ncepower
 nce0205ia.pdf pdf_icon

NCE0208IA

http //www.ncepower.com NCE0205IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.2. Size:287K  ncepower
 nce0202za.pdf pdf_icon

NCE0208IA

Pb Free Product http //www.ncepower.com NCE0202ZA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0202ZA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE01P18L, NCE01P30D, NCE01P30I, NCE01P30K, NCE01P30L, NCE01P35K, NCE0203S, NCE0205IA, IRF9540N, NCE0224A, NCE0224AF, NCE0224AK, NCE0224DA, NCE0224F, NCE0250D, NCE0260P, NCE0260T