FQA11N90F109 Todos los transistores

September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especi

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switching

September 2007 QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description 11A, 900V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 60 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 23pF) This advanced technology has been especially tailored

September 2007 QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description 11.4A, 900V, RDS(on) = 0.96 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 72 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especi

FQA11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switching

FQA11N90-F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 m Description This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar stripe 11.4 A, 900 V, RDS(on) = 960 m (Max.) @ VGS = 10 V, and DMOS technology. This advanced MOSFET technology ID = 5.7 A has been especially tailored to reduce on-state resistance, Low

isc N-Channel MOSFET Transistor FQA11N90 FEATURES Drain Current I = 11.4A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 0.96 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.