NCE0260P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE0260P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 130 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TO-3P

Búsqueda de reemplazo de MOSFET NCE0260P

NCE0260P Datasheet (PDF)

..1. Size:327K ncepower
nce0260p.pdf

Pb Free Producthttp://www.ncepower.com NCE0260PNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260P uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)

7.1. Size:321K ncepower
nce0260.pdf

Pb Free Producthttp://www.ncepower.com NCE0260NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)

7.2. Size:313K ncepower
nce0260t.pdf

Pb Free Producthttp://www.ncepower.com NCE0260TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0260T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)

9.1. Size:326K ncepower
nce0224f.pdf

http://www.ncepower.com NCE0224FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.2. Size:352K ncepower
nce0240f.pdf

Pb Free Producthttp://www.ncepower.com NCE0240FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

9.3. Size:305K ncepower
nce0205ia.pdf

http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

9.4. Size:314K ncepower
nce0224af.pdf

Pb Free ProductNCE0224AFhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.5. Size:721K ncepower
nce02p20k.pdf

http://www.ncepower.comNCE02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-200V,I =-20A Schematic diagramDS DR

9.6. Size:319K ncepower
nce0224.pdf

NCE0224http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =200V,ID =24A RDS(ON)

9.7. Size:332K ncepower
nce0275t.pdf

Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

9.8. Size:344K ncepower
nce0224d.pdf

Pb Free Producthttp://www.ncepower.com NCE0224DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.9. Size:287K ncepower
nce0202za.pdf

Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

9.10. Size:324K ncepower
nce0250d.pdf

Pb Free Producthttp://www.ncepower.com NCE0250DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0250D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =50A RDS(ON)

9.11. Size:322K ncepower
nce0208ia.pdf

Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

9.12. Size:433K ncepower
nce0208ka.pdf

Pb Free Producthttp://www.ncepower.com NCE0208KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

9.13. Size:283K ncepower
nce0202m.pdf

http://www.ncepower.com NCE0202MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS = 200V,ID =2A SRDS(ON)

9.14. Size:324K ncepower
nce0203s.pdf

Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

9.15. Size:707K ncepower
nce020n30k.pdf

Pb Free Producthttp://www.ncepower.comNCE020N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE020N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =180ADS DR =1.9 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =2.6 m @ V =4.5V

9.16. Size:338K ncepower
nce0224a.pdf

Pb Free ProductNCE0224Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.17. Size:753K ncepower
nce025n30k.pdf

NCE025N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =115ADS(ON) DS Dbe used in a wide variety of applications. R =2.2m (typical) @ V =10VDS(ON) GSR =3.6m (typical) @ V =4.5VApplication DS(ON) GS

9.18. Size:342K ncepower
nce0224da.pdf

Pb Free Producthttp://www.ncepower.com NCE0224DANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.19. Size:396K ncepower
nce0224k.pdf

Pb Free Producthttp://www.ncepower.com NCE0224KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.20. Size:657K ncepower
nce0275d.pdf

http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

9.21. Size:389K ncepower
nce0224ak.pdf

Pb Free ProductNCE0224AKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

9.22. Size:355K ncepower
nce0240.pdf

Pb Free Producthttp://www.ncepower.com NCE0240NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

9.23. Size:653K ncepower
nce0275.pdf

http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

9.24. Size:735K ncepower
nce0270t.pdf

http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR

9.25. Size:751K ncepower
nce025n30g.pdf

NCE025N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =115ADS(ON) DS Dbe used in a wide variety of applications. R =2.2m (typical) @ V =10VDS(ON) GSR =3.6m (typical) @ V =4.5VApplication DS(ON) GS

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