NCE1013E Todos los transistores

 

NCE1013E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE1013E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.66 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 1.44 nC
   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 17 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

NCE1013E Datasheet (PDF)

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 nce1013e.pdf pdf_icon

NCE1013E

http://www.ncepower.com NCE1013ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE1013E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V,ID =-0.66A RDS(ON)

 8.1. Size:694K  ncepower
 nce1012e.pdf pdf_icon

NCE1013E

http://www.ncepower.comNCE1012ENCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1012E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 1.8V. This device is suitable for use as aBattery protection or in other Switching application.General Features V = 20V,I =0.6ADS DSchematic diagramR

 9.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE1013E

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

 9.2. Size:677K  ncepower
 nce10td60bf nce10td60bd nce10td60b.pdf pdf_icon

NCE1013E

PbFreeProduct NCE10TD60BF,NCE10TD60BD,NCE10TD60B 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N5951

 

 
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