NCE1512IA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE1512IA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 115 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de NCE1512IA MOSFET
- Selecciónⓘ de transistores por parámetros
NCE1512IA datasheet
nce1512ia.pdf
Pb Free Product http //www.ncepower.com NCE1512IA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE1512IA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 150V,ID =12A RDS(ON)
nce1579c.pdf
Pb Free Product http //www.ncepower.com NCE1579C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
nce1540ka.pdf
http //www.ncepower.com NCE1540KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce1503s.pdf
http //www.ncepower.com NCE1503S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)
nce15p25j.pdf
http //www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)
nce15td60bt.pdf
Pb Free Product NCE15TD60BT 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce15h10.pdf
http //www.ncepower.com NCE15H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram V =150V,I =100A DS D R
nce15h10a.pdf
Pb Free Product http //www.ncepower.com NCE15H10A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10A uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =150V,I =100A Schematic diagram DS D R
nce15td65bt.pdf
Pb Free Product NCE15TD65BT 650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce15td135lp.pdf
PbFreeProduct NCE15TD135LP 1350V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce1520.pdf
Pb Free Product http //www.ncepower.com NCE1520 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
nce1520k.pdf
Pb Free Product http //www.ncepower.com NCE1520K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
nce15h15t.pdf
Pb Free Product http //www.ncepower.com NCE15H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =150V,ID =150A Schematic diagram RDS(ON)
nce1540af.pdf
http //www.ncepower.com NCE1540AF NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AF uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =150V,I =20A DS D R
nce15td60bp.pdf
Pb Free Product NCE15TD60BP 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce1505s.pdf
Pb Free Product http //www.ncepower.com NCE1505S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)
nce15td120lp.pdf
PbFreeProduct NCE15TD120LP 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15td65bf.pdf
Pb Free Product NCE15TD65BF 650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce1540ad.pdf
Pb Free Product http //www.ncepower.com NCE1540AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce15td65bp.pdf
Pb Free Product NCE15TD65BP 650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce1570.pdf
Pb Free Product http //www.ncepower.com NCE1570 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)
nce15td60bd.pdf
Pb Free Product NCE15TD60BD 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce1507ak.pdf
http //www.ncepower.com NCE1507AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)
nce15p30.pdf
http //www.ncepower.com NCE15P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. General Features V =-150V,I =-30A Schematic diagram DS D R
nce1550f.pdf
Pb Free Product http //www.ncepower.com NCE1550F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
nce1579c.pdf
http //www.ncepower.com NCE1579C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
nce15td135lt.pdf
PbFreeProduct NCE15TD135LT 1350V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15p25i.pdf
http //www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS D Schematic diagram RDS(ON)
nce15td60b.pdf
PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch
nce1502r.pdf
Pb Free Product http //www.ncepower.com NCE1502R NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
nce1550.pdf
Pb Free Product http //www.ncepower.com NCE1550 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
nce15p25jk.pdf
NCE15P25JK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)
nce1504r.pdf
http //www.ncepower.com NCE1504R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)
nce15td60bf.pdf
Pb Free Product NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce15td120bd.pdf
Pb Free Product NCE15TD120BD 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce15p25ji.pdf
http //www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS D Schematic diagram RDS(ON)
nce15p25.pdf
http //www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS D RDS(ON)
nce15t60bd.pdf
PbFreeProduct NCE15T60BD 600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw
nce15td120bt.pdf
PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15p30k.pdf
http //www.ncepower.com NCE15P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-30A Schematic diagram DS D R
nce1540k.pdf
Pb Free Product http //www.ncepower.com NCE1540K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce15td120lt.pdf
PbFreeProduct NCE15TD120LT 1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
Otros transistores... NCE1013E, NCE1102N, NCE1205, NCE1490, NCE14P40K, NCE1504R, NCE1505S, NCE1507AK, TK10A60D, NCE1520, NCE1520K, NCE1520KA, NCE1540AD, NCE1540AF, NCE1540KA, NCE1550F, NCE15H10
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