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NCE15P25JK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE15P25JK
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 145 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 148 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO252
 

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NCE15P25JK Datasheet (PDF)

 ..1. Size:517K  ncepower
 nce15p25jk.pdf pdf_icon

NCE15P25JK

NCE15P25JK http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 5.1. Size:532K  ncepower
 nce15p25j.pdf pdf_icon

NCE15P25JK

http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 5.2. Size:480K  ncepower
 nce15p25ji.pdf pdf_icon

NCE15P25JK

http://www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)

 6.1. Size:527K  ncepower
 nce15p25i.pdf pdf_icon

NCE15P25JK

http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE1540KA , NCE1550F , NCE15H10 , NCE15H10A , NCE15P25 , NCE15P25I , NCE15P25J , NCE15P25JI , STF13NM60N , NCE15P30 , NCE15P30K , NCE1608N , NCE16P07J , NCE16P40Q , NCE1805S , NCE1810AK , NCE1826K .

History: STW40N20 | PSMN3R4-30BL | IM4435G | HY1906C2 | SWP70N10V | IRFH5020TRPBF | IRFU1205PBF

 

 
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