NCE15P30K Todos los transistores

 

NCE15P30K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE15P30K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 117 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: TO252
 

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NCE15P30K Datasheet (PDF)

 ..1. Size:796K  ncepower
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NCE15P30K

http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

 6.1. Size:770K  ncepower
nce15p30.pdf pdf_icon

NCE15P30K

http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

 8.1. Size:532K  ncepower
nce15p25j.pdf pdf_icon

NCE15P30K

http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 8.2. Size:527K  ncepower
nce15p25i.pdf pdf_icon

NCE15P30K

http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)

Otros transistores... NCE15H10 , NCE15H10A , NCE15P25 , NCE15P25I , NCE15P25J , NCE15P25JI , NCE15P25JK , NCE15P30 , IRF2807 , NCE1608N , NCE16P07J , NCE16P40Q , NCE1805S , NCE1810AK , NCE1826K , NCE2004Y , NCE2006Y .

 

 
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