NCE2302C Todos los transistores

 

NCE2302C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE2302C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.1 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT-23
 

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NCE2302C Datasheet (PDF)

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NCE2302C

Pb Free Producthttp://www.ncepower.com NCE2302CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD

 7.1. Size:234K  ncepower
nce2302.pdf pdf_icon

NCE2302C

Pb Free Producthttp://www.ncepower.com NCE2302NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 7.2. Size:245K  ncepower
nce2302b.pdf pdf_icon

NCE2302C

Pb Free Producthttp://www.ncepower.com NCE2302BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD

 8.1. Size:262K  ncepower
nce2301a.pdf pdf_icon

NCE2302C

Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

Otros transistores... NCE20P85GU , NCE2301A , NCE2301B , NCE2301C , NCE2301D , NCE2301E , NCE2301F , NCE2302B , IRF840 , NCE2308X , NCE2312X , NCE2321 , NCE2321A , NCE2323 , NCE3008N , NCE3008XM , NCE3008Y .

History: RU40P4H | JFFM13N50E | WNMD2154

 

 
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