NCE2308X Todos los transistores

 

NCE2308X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE2308X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.096 Ohm
   Paquete / Cubierta: SOT-23
 

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NCE2308X Datasheet (PDF)

 ..1. Size:637K  ncepower
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NCE2308X

http://www.ncepower.comNCE2308XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE2308X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

 8.1. Size:262K  ncepower
nce2301a.pdf pdf_icon

NCE2308X

Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

 8.2. Size:257K  ncepower
nce2301c.pdf pdf_icon

NCE2308X

Pb Free Producthttp://www.ncepower.com NCE2301CNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -15V,

 8.3. Size:330K  ncepower
nce2301e.pdf pdf_icon

NCE2308X

Pb Free Producthttp://www.ncepower.com NCE2301ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

Otros transistores... NCE2301A , NCE2301B , NCE2301C , NCE2301D , NCE2301E , NCE2301F , NCE2302B , NCE2302C , 20N60 , NCE2312X , NCE2321 , NCE2321A , NCE2323 , NCE3008N , NCE3008XM , NCE3008Y , NCE3009S .

History: SJMN380R65D | STB60NF06L | IRFBA1404 | STK0760P | NCEP045N10D | IPP034NE7N3G | IRLU3636

 

 
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