NCE3008XM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE3008XM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm

Encapsulados: SOT89

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NCE3008XM datasheet

 ..1. Size:631K  ncepower
 nce3008xm.pdf pdf_icon

NCE3008XM

http //www.ncepower.com NCE3008XM NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008XM uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S General Features V = 30V,I = 8A Schematic diagram

 7.1. Size:268K  ncepower
 nce3008m.pdf pdf_icon

NCE3008XM

Pb Free Product http //www.ncepower.com NCE3008M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic diagram General Feature

 7.2. Size:333K  ncepower
 nce3008n.pdf pdf_icon

NCE3008XM

http //www.ncepower.com NCE3008N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 7.3. Size:308K  ncepower
 nce3008y.pdf pdf_icon

NCE3008XM

http //www.ncepower.com NCE3008Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE2302B, NCE2302C, NCE2308X, NCE2312X, NCE2321, NCE2321A, NCE2323, NCE3008N, IRF640, NCE3008Y, NCE3009S, NCE3013J, NCE3015S, NCE3025G, NCE3030K, NCE3030Q, NCE3040Q