NCE3008XM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE3008XM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 3.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
   Carga de la puerta (Qg): 9.3 nC
   Tiempo de subida (tr): 4.5 nS
   Conductancia de drenaje-sustrato (Cd): 39 pF
   Resistencia entre drenaje y fuente RDS(on): 0.039 Ohm
   Paquete / Cubierta: SOT89

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NCE3008XM Datasheet (PDF)

..1. Size:631K ncepower
nce3008xm.pdf

http://www.ncepower.comNCE3008XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3008XM uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aGBattery protection or in other Switching application.SGeneral Features V = 30V,I = 8A Schematic diagram

7.1. Size:268K ncepower
nce3008m.pdf

Pb Free Producthttp://www.ncepower.com NCE3008MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic diagram General Feature

7.2. Size:333K ncepower
nce3008n.pdf

http://www.ncepower.com NCE3008NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

7.3. Size:308K ncepower
nce3008y.pdf

http://www.ncepower.com NCE3008YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

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