NCE30P25Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30P25Q

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 227 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: DFN3.3X3.3-8L

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NCE30P25Q datasheet

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NCE30P25Q

http //www.ncepower.com NCE30P25Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -25A RDS(ON)

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NCE30P25Q

Pb Free Product http //www.ncepower.com NCE30P25S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

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NCE30P25Q

http //www.ncepower.com NCE30P25BQ NCE P-Channel Enhancement Mode Power MOSFET General Features V = -30V,I = -25A DS D Description R

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nce30p28q.pdf pdf_icon

NCE30P25Q

http //www.ncepower.com NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Schematic diagram General Features VDS = -30V,ID = -28A RDS(ON)

Otros transistores... NCE30NP1812Q, NCE30NP4030G, NCE30P06J, NCE30P10S, NCE30P12BS, NCE30P15AS, NCE30P16Q, NCE30P25BQ, IRF1010E, NCE30P30L, NCE30P40K, NCE30P55K, NCE30P55L, NCE30P60G, NCE30P85K, NCE3134, NCE3400E