SDF07N50 Todos los transistores

 

SDF07N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SDF07N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 104 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.93 Ohm
   Paquete / Cubierta: TO220F
 

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SDF07N50 Datasheet (PDF)

 ..1. Size:188K  samhop
 sdf07n50 sdp07n50.pdf pdf_icon

SDF07N50

SDP07N50SDF07N50aS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.500V 7A 0.76 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Ma

 0.1. Size:116K  samhop
 sdf07n50t.pdf pdf_icon

SDF07N50

SDF07N50TaS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.500V 7A 1.2 @ VGS=10V TO-220F Package.DGG D SSDF SERIESTO-220FSORDERING INFORMATIONOrdering Code Package Marking Code Delivery Mode RoHS StatusTubeS

 8.1. Size:516K  samhop
 sdf07n80 sdp07n80.pdf pdf_icon

SDF07N50

SDP07N80SDF07N80aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.800V 7A 1.4 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Mar

 8.2. Size:188K  samhop
 sdf07n65 sdp07n65.pdf pdf_icon

SDF07N50

SDP07N65SDF07N65aS mHop Microelectronics C orp.Ver 3.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.650V 7A 1.2 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Mar

MOSTRAR MÁS

Otros transistores... SDF07N80 , FQA140N10 , SDF07N65 , FQA160N08 , FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 , IRFZ24N , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 .

History: IRF720

 

 
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