NCE3402A Todos los transistores

 ..1. Size:244K  ncepower
 nce3402a.pdf

Pb Free Product http //www.ncepower.com NCE3402A NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3402A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features

 7.1. Size:241K  ncepower
 nce3402.pdf

Pb Free Product http //www.ncepower.com NCE3402 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features

 8.1. Size:249K  1
 nce3401ay.pdf

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30

 8.2. Size:602K  ncepower
 nce3407a.pdf

http //www.ncepower.com NCE3407A NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3407A uses advanced trench technology to provide excellent R , This device is suitable for use as a load DS(ON) G switch or in PWM applications. General Features S V = -30V,I = -4.3A DS D Schematic diagram R

 8.3. Size:812K  ncepower
 nce3404x.pdf

http //www.ncepower.com NCE3404X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3404X uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features V = 30V,I = 5.8A

 8.4. Size:248K  ncepower
 nce3401a.pdf

Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic

 8.5. Size:326K  ncepower
 nce3400.pdf

Pb Free Product http //www.ncepower.com NCE3400 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram

 8.6. Size:281K  ncepower
 nce3407.pdf

Pb Free Product http //www.ncepower.com NCE3407 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 8.7. Size:278K  ncepower
 nce3400xy.pdf

NCE3400XY http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram General Features VDS = 30

 8.8. Size:271K  ncepower
 nce3406an.pdf

http //www.ncepower.com NCE3406AN NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406AN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 30V,ID = 6A

 8.9. Size:298K  ncepower
 nce3400x.pdf

http //www.ncepower.com NCE3400X NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30V,

 8.10. Size:241K  ncepower
 nce3401.pdf

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID

 8.11. Size:247K  ncepower
 nce3400ay.pdf

http //www.ncepower.com NCE3400AY NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram VDS = 30

 8.12. Size:265K  ncepower
 nce3401by.pdf

http //www.ncepower.com NCE3401BY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD

 8.13. Size:243K  ncepower
 nce3401y.pdf

Pb Free Product http //www.ncepower.com NCE3401Y NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE3401Y uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,

 8.14. Size:267K  ncepower
 nce3401ay.pdf

http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD

 8.15. Size:238K  ncepower
 nce3400e.pdf

http //www.ncepower.com NCE3400E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

 8.16. Size:261K  ncepower
 nce3407ay.pdf

Pb Free Product http //www.ncepower.com NCE3407AY NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE3407AY uses advanced trench technology to provide G excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

 8.17. Size:283K  ncepower
 nce3406n.pdf

http //www.ncepower.com NCE3406N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 30V,ID = 6A

 8.18. Size:253K  ncepower
 nce3404y.pdf

http //www.ncepower.com NCE3404Y NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE3404Y uses advanced trench technology to provide G excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. S Genera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)

 8.19. Size:615K  ncepower
 nce3401e.pdf

Pb Free Product http //www.ncepower.com NCE3401E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features V = -30V,I = -4.4A DS D

 8.20. Size:729K  ncepower
 nce3407e.pdf

Pb Free Product http //www.ncepower.com NCE3407E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3407E uses advanced trench technology to provide excellent R . This device is suitable for use as a load DS(ON) switch or in PWM applications.It is ESD protected. General Features V = -30V,I = -4.3A Schematic diagram DS D R = 28m @ V =-10V (typ) DS(ON) GS R = 38m

 8.21. Size:321K  ncepower
 nce3404.pdf

 8.22. Size:248K  ncepower
 nce3400a.pdf

Pb Free Product http //www.ncepower.com NCE3400A NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S General Features Schematic diagram

 8.23. Size:895K  cn vbsemi
 nce3404.pdf

NCE3404 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

 8.24. Size:848K  cn vbsemi
 nce3400a.pdf

NCE3400A www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G