NCE3420X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

http://www.ncepower.com NCE3420XNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3420X uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. SGeneral Features Schematic diagram VDS = 20V,ID = 6A

Pb Free Producthttp://www.ncepower.com NCE3420NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. SSchematic diagram General Features VD

Pb Free Producthttp://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30

http://www.ncepower.comNCE3407ANCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3407A uses advanced trench technology to provideexcellent R , This device is suitable for use as a loadDS(ON)Gswitch or in PWM applications.General FeaturesS V = -30V,I = -4.3ADS DSchematic diagramR

http://www.ncepower.comNCE3404XNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE3404X uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.SSchematic diagramGeneral Features V = 30V,I = 5.8A

Pb Free Producthttp://www.ncepower.com NCE3401ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.4A Schematic

Pb Free Producthttp://www.ncepower.com NCE3400NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

Pb Free Producthttp://www.ncepower.com NCE3415YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

Pb Free Producthttp://www.ncepower.com NCE3407NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3407 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3415NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A S

NCE3400XYhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features VDS = 30

Pb Free Producthttp://www.ncepower.com NCE3402ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3402A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

http://www.ncepower.com NCE3406ANNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406AN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 30V,ID = 6A

http://www.ncepower.com NCE3400XNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30V,

Pb Free Producthttp://www.ncepower.com NCE3401NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID

http://www.ncepower.com NCE3400AYNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram VDS = 30

http://www.ncepower.com NCE3401BYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

Pb Free Producthttp://www.ncepower.com NCE3401YNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3401Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,

http://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

http://www.ncepower.com NCE3400ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. Schematic diagram General Features

Pb Free Producthttp://www.ncepower.com NCE3407AYNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3407AY uses advanced trench technology to provide Gexcellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30V,ID = -4.3A RDS(ON)

http://www.ncepower.com NCE3406NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3406N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 30V,ID = 6A

Pb Free Producthttp://www.ncepower.com NCE3416NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = 20V,ID =6.5A Sc

Pb Free Producthttp://www.ncepower.com NCE3417NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -12V,ID

http://www.ncepower.com NCE3404YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE3404Y uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. SGenera Features Schematic diagram VDS = 30V,ID = 5.8A RDS(ON)

Pb Free Producthttp://www.ncepower.comNCE3401ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3401E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.It is ESD protested.General Features V = -30V,I = -4.4ADS D

Pb Free Producthttp://www.ncepower.com NCE3402NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

http://www.ncepower.com NCE3415ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =-4

Pb Free Producthttp://www.ncepower.comNCE3407ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3407E uses advanced trench technology to provideexcellent R . This device is suitable for use as a loadDS(ON)switch or in PWM applications.It is ESD protected.General Features V = -30V,I = -4.3A Schematic diagramDS DR = 28m @ V =-10V (typ)DS(ON) GSR = 38m

Pb Free Producthttp://www.ncepower.com NCE3404NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable Gfor use as a load switch and PWM applications. SGenera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE3400ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SGeneral Features Schematic diagram

NCE3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

NCE3400Awww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G