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NCE40P06J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40P06J
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 109 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: DFN2X2-6L
 

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NCE40P06J Datasheet (PDF)

 ..1. Size:556K  ncepower
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NCE40P06J

http://www.ncepower.comNCE40P06JNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P06J uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SSchematic diagramGeneral Features V = -40V,I = -

 6.1. Size:396K  ncepower
 nce40p06s.pdf pdf_icon

NCE40P06J

Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 7.1. Size:293K  ncepower
 nce40p05y.pdf pdf_icon

NCE40P06J

Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)

 7.2. Size:371K  ncepower
 nce40p05s.pdf pdf_icon

NCE40P06J

Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE40H10K , NCE40H11 , NCE40H11K , NCE40H12A , NCE40H25LL , NCE40H30D , NCE40H32LL , NCE40NP2815G , 2N7002 , NCE40P06S , NCE40P15Q , NCE40P20Q , NCE40P20Q1 , NCE40P25G , NCE40P30K , NCE40P40D , NCE4435B .

History: NTP13N10 | FCU600N65S3R0 | SI5948DU | 11N90 | STB6NK60ZT4 | KMD6D0DN30QA

 

 
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