NCE40P25G Todos los transistores

 ..1. Size:637K  ncepower
 nce40p25g.pdf

http //www.ncepower.com NCE40P25G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P25G uses uses advanced trench technology to General Features provide excellent R , This device is suitable for use as a load V =-40V,I =-25A DS(ON) DS D switch or power management. R =11.5m (typical) @ V =10V DS(ON) GS R =18.5m (typical) @ V =4.5V Application DS(ON) GS DC/

 7.1. Size:719K  ncepower
 nce40p20q1.pdf

http //www.ncepower.com NCE40P20Q1 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P20Q1 uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -20A DS D or power management. R

 7.2. Size:683K  ncepower
 nce40p20q.pdf

http //www.ncepower.com NCE40P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P20Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -20A DS D or power management. R

 8.1. Size:397K  ncepower
 nce40p70k.pdf

Pb Free Product http //www.ncepower.com NCE40P70K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)

 8.2. Size:294K  ncepower
 nce40p40d.pdf

Pb Free Product http //www.ncepower.com NCE40P40D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)

 8.3. Size:470K  ncepower
 nce40p40k.pdf

Pb Free Product http //www.ncepower.com NCE40P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)

 8.4. Size:293K  ncepower
 nce40p05y.pdf

Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON)

 8.5. Size:396K  ncepower
 nce40p06s.pdf

Pb Free Product http //www.ncepower.com NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 8.6. Size:402K  ncepower
 nce40p13s.pdf

Pb Free Product http //www.ncepower.com NCE40P13S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 8.7. Size:742K  ncepower
 nce40p15q.pdf

http //www.ncepower.com NCE40P15Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -15A DS D or power management. R

 8.8. Size:349K  ncepower
 nce40p15k.pdf

NCE40P15K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON)

 8.9. Size:371K  ncepower
 nce40p05s.pdf

Pb Free Product http //www.ncepower.com NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

 8.10. Size:361K  ncepower
 nce40p40l.pdf

 8.11. Size:556K  ncepower
 nce40p06j.pdf

http //www.ncepower.com NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S Schematic diagram General Features V = -40V,I = -

 8.12. Size:716K  ncepower
 nce40p30k.pdf

 8.13. Size:446K  ncepower
 nce40p07s.pdf

Pb Free Product http //www.ncepower.com NCE40P07S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)

 8.14. Size:869K  cn vbsemi
 nce40p05y.pdf

NCE40P05Y www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2