NCE5055K MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCE5055K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE5055K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 55 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 169 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO-252

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NCE5055K datasheet

..1. Size:438K ncepower
nce5055k.pdf pdf_icon

9.1. Size:793K ncepower
nce50nf600k.pdf pdf_icon

NCE50NF600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

9.2. Size:400K ncepower
nce5015s.pdf pdf_icon

9.3. Size:812K ncepower
nce50nf180.pdf pdf_icon

NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust

9.4. Size:797K ncepower
nce50nf180i.pdf pdf_icon

NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

9.5. Size:760K ncepower
nce50n2k2f.pdf pdf_icon

NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

9.6. Size:786K ncepower
nce50nf520k.pdf pdf_icon

NCE50NF520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

9.7. Size:271K ncepower
nce5020q.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE5020Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =20A Schematic diagram RDS(ON)

9.8. Size:1491K ncepower
nce50td120bt.pdf pdf_icon

Pb Free Product NCE50TD120BT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

9.9. Size:1161K ncepower
nce50ed120vt.pdf pdf_icon

NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =

9.10. Size:784K ncepower
nce50nf330i.pdf pdf_icon

NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

9.11. Size:716K ncepower
nce50nf130v.pdf pdf_icon

NCE50NF130V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

9.12. Size:853K ncepower
nce50nf220f.pdf pdf_icon

NCE50NF220F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

9.13. Size:787K ncepower
nce50nf600i.pdf pdf_icon

NCE50NF600I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

9.14. Size:784K ncepower
nce50nf220k.pdf pdf_icon

NCE50NF220K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

9.15. Size:794K ncepower
nce50nf520.pdf pdf_icon

NCE50NF520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus

9.16. Size:778K ncepower
nce50nf220i.pdf pdf_icon

NCE50NF220I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

9.17. Size:820K ncepower
nce50n1k8f.pdf pdf_icon

NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

9.18. Size:807K ncepower
nce50n1k8k.pdf pdf_icon

NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

9.19. Size:712K ncepower
nce50nf130f.pdf pdf_icon

NCE50NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

9.20. Size:815K ncepower
nce50nf220d.pdf pdf_icon

NCE50NF220D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind

9.21. Size:1676K ncepower
nce50td120vt.pdf pdf_icon

Pb Free Product NCE50TD120VT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

9.22. Size:800K ncepower
nce50n1k2k.pdf pdf_icon

NCE50N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and indus

9.23. Size:722K ncepower
nce50nf130k.pdf pdf_icon

NCE50NF130K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

9.24. Size:816K ncepower
nce50nf520d.pdf pdf_icon

NCE50NF520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

9.25. Size:1564K ncepower
nce50td120vtp.pdf pdf_icon

Pb Free Product NCE50TD120VTP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

9.26. Size:744K ncepower
nce50nf130ll.pdf pdf_icon

NCE50NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and

9.27. Size:809K ncepower
nce50nf330f.pdf pdf_icon

NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

9.28. Size:1416K ncepower
nce50td120bp.pdf pdf_icon

Pb Free Product NCE50TD120BP 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

9.29. Size:804K ncepower
nce50nf180k.pdf pdf_icon

NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

9.30. Size:823K ncepower
nce50n1k8i.pdf pdf_icon

NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

9.31. Size:728K ncepower
nce50nf130d.pdf pdf_icon

NCE50NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

9.32. Size:799K ncepower
nce50nf330.pdf pdf_icon

NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu

9.33. Size:753K ncepower
nce50n2k2r.pdf pdf_icon

NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

9.34. Size:740K ncepower
nce50n540k.pdf pdf_icon

NCE50N540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus

9.35. Size:1194K ncepower
nce50ed65vt.pdf pdf_icon

NCE50ED65VT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 50

9.36. Size:823K ncepower
nce50nf600d.pdf pdf_icon

NCE50NF600D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

9.37. Size:780K ncepower
nce50nf520i.pdf pdf_icon

NCE50NF520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

9.38. Size:1468K ncepower
nce50td120ww.pdf pdf_icon

Pb Free Product NCE50TD120WW 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

9.39. Size:821K ncepower
nce50nf330d.pdf pdf_icon

NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

9.40. Size:705K ncepower
nce50n2k2i.pdf pdf_icon

NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

9.41. Size:444K ncepower
nce5080k.pdf pdf_icon

9.42. Size:794K ncepower
nce50n540f.pdf pdf_icon

NCE50N540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.3 nC power conversion, and ind

9.43. Size:741K ncepower
nce50n2k2d.pdf pdf_icon

NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

9.44. Size:1222K ncepower
nce50eu65ut.pdf pdf_icon

NCE50EU65UT 650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 50

9.45. Size:801K ncepower
nce50nf180d.pdf pdf_icon

NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

9.46. Size:712K ncepower
nce50n2k2k.pdf pdf_icon

NCE50N2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

9.47. Size:838K ncepower
nce50n1k8d.pdf pdf_icon

NCE50N1K8D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

9.48. Size:1473K ncepower
nce50td120wt.pdf pdf_icon

Pb Free Product NCE50TD120WT 1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

9.49. Size:737K ncepower
nce50nf130t.pdf pdf_icon

NCE50NF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i

9.50. Size:795K ncepower
nce50nf220.pdf pdf_icon

NCE50NF220 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indu

9.51. Size:820K ncepower
nce50nf600r.pdf pdf_icon

NCE50NF600R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

9.52. Size:856K ncepower
nce50nf180f.pdf pdf_icon

NCE50NF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus

9.53. Size:1175K ncepower
nce50ed120vtp.pdf pdf_icon

NCE50ED120VTP 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

9.54. Size:820K ncepower
nce50n1k8r.pdf pdf_icon

NCE50N1K8R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

9.55. Size:791K ncepower
nce50nf330k.pdf pdf_icon

NCE50NF330K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

9.56. Size:805K ncepower
nce50nf520f.pdf pdf_icon

NCE50NF520F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

9.57. Size:810K ncepower
nce50nf600f.pdf pdf_icon

NCE50NF600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

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