NCE50N1K8F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE50N1K8F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 3.3 nC
   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO220F

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NCE50N1K8F Datasheet (PDF)

..1. Size:820K ncepower
nce50n1k8f.pdf

NCE50N1K8FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

5.1. Size:807K ncepower
nce50n1k8k.pdf

NCE50N1K8KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

5.2. Size:823K ncepower
nce50n1k8i.pdf

NCE50N1K8IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

5.3. Size:838K ncepower
nce50n1k8d.pdf

NCE50N1K8DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

5.4. Size:820K ncepower
nce50n1k8r.pdf

NCE50N1K8RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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