NCE50N1K8I Todos los transistores

 

NCE50N1K8I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE50N1K8I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 3.3 nC
   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO-251
 

 Búsqueda de reemplazo de NCE50N1K8I MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE50N1K8I Datasheet (PDF)

 ..1. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K8I

NCE50N1K8IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K8I

NCE50N1K8FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.2. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K8I

NCE50N1K8KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

 5.3. Size:838K  ncepower
 nce50n1k8d.pdf pdf_icon

NCE50N1K8I

NCE50N1K8DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind

MOSTRAR MÁS

Otros transistores... NCE4606B , NCE5015S , NCE5020Q , NCE5055K , NCE5080K , NCE50N1K2K , NCE50N1K8D , NCE50N1K8F , 10N60 , NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I , NCE50N2K2K , NCE50N2K2R , NCE50N540K .

 

 
Back to Top

 


 
.